New by Manufacturer from Nexperia

Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

The GANB1R2-040QBA is offered in a Very-Thin-Profile Quad Flat No-Lead (VQFN) package. The GANB1R2-040QBA is a normally-off e-mode device delivering superior performance and very low on-state resistance.

The Nexperia GANB012-040CBA is available in a Wafer-Level Chip Scale (WLCSP) package. The GANB012-040CBA is a normally-off e-mode device that provides superior performance.

Features

² Enhancement mode - normally-off power switch

² Bi-directional device

² Ultra-high switching speed capability

² Ultra-low on-state resistance

² RoHS, Pb-free, REACH-compliant

² High efficiency and high power density

² Wafer-Level-Chip-Scale Package (WLCSP) 1.2mm x 1.7mm (GANB012-040CBA)

² Very-Thin-Profile Quad Flat no-lead package (VQFN) 4.0mm x 6.0mm (GANB1R2-040QBA)

Applications

v High-side load switch

v OVP protection in the smartphone USB port

v Power switch circuits

v Standby power system

Datasheets

GANB012-040CBA

GANB1R2-040QBA

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