onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET is built using high-performance PowerTrench technology for extremely low RDS(on) switching performance and ruggedness. This P-channel MOSFET offers high power and current-handling capabilities in a widely used surface-mount package. The NTTFS007P02P8 MOSFET features -20V drain to source voltage, ±8V gate to source voltage, 3.8°C/W thermal resistance, junction to case, and 4.5Ω gate resistance. This P-channel  MOSFET is Pb-free, Halide-free, and RoHS compliant. Typical applications include load switch, battery management, power management, and reverse polarity protection.

Features

· Maximum RDS(on) = 6.5m at VGS = −4.5V, ID = -14A

· Maximum RDS(on) = 9.8m at VGS = −2.5V, ID = -11A

· Maximum RDS(on) = 20m at VGS = −1.8V, ID = -9A

· High-performance Trench technology for extremely low RDS(on)

· High power and current handling capability in a widely used surface mount package

· Pb−free and Halide-free

· RoHS compliant

Applications

· Load switch

· Battery management

· Power management

· Reverse polarity protection

Specifications