onsemi NxT2023N065M3S EliteSiC MOSFETs

onsemi NxT2023N065M3S EliteSiC MOSFETs are high-performance 650V Silicon Carbide (SiC) MOSFETs with a typical RDS(on) of 23mΩ and excellent thermal and switching characteristics. These MOSFETs feature low effective output capacitance, high efficiency, fast switching, and ultra-low gate charge. The NxT2023N065M3S MOSFETs support continuous drain currents up to 72A and operate across a wide temperature range from -55°C to 175°C. These MOSFETs are RoHS-compliant, halide-free, and housed in a compact T2PAK-7L package. The NVT2023N065M3S EliteSiC MOSFET is AEC-Q101 qualified, making it ideal for automotive-grade applications such as on-board chargers and DC-DC converters in EV/HEV platforms. The NTT2023N065M3S EliteSiC MOSFET is suitable for SMPS, solar inverters, UPS, energy storage, and EV charging infrastructure.

Features

· Typical RDS(on) = 23mΩ @ VGS = 18V

· Low effective output capacitance

· Ultra-low gate charge

· NVT2023N065M3S is qualified according to AEC-Q101

· 100% UIS tested

· Halide-free and RoHS-compliant with exemption 7a

· Pb-free 2LI (on second-level interconnection)

· T2PAK-7L with CASE 763AC package

Applications

· NTT2023N065M3S:

o Designed for industrial applications such as:

§ Switch Mode Power Supplies (SMPS)

§ Solar inverters

§ Uninterruptible Power Supplies (UPS)

§ Energy storage

§ EV charging infrastructure

· NVT2023N065M3S:

o Automotive-qualified (AEC-Q101 compliant):

§ On-board and off-board EV chargers

§ Automotive DC-DC converters for EV/HEV systems

Specifications

· 650V drain-to-source voltage

· -8V/+22V gate-to-source voltage

· 72A at 25°C and 53A at 100°C continuous drain current

· 288W at TC=25°C power dissipation

· 174A pulsed drain current

· 0.52°C/W thermal resistance (RJC)

· 74nC ultra-low gate charge

· Turn-on delay of 24ns, turn-off delay of 50ns at 25°C

· EON = 98µJ, EOFF = 29µJ turn-on/off low switching losses

· -55°C to +175°C wide operating temperature range