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NXP semiconductors

PMV50XPR

PMV50XPR

Transistors
Discrete Semiconductors
MOSFETs
Single FETs
Product description: P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
INQUIRY

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Features and benefits

Low threshold voltage
Low on-state resistance
Trench MOSFET technology
Enhanced power dissipation capability of 1096 mW

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Contact: Joanna

Phone: Info@addcomponents.hk

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