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NXP semiconductors

  • PMV50XPR
PMV50XPR

PMV50XPR

  • Transistors
  • Discrete Semiconductors
  • MOSFETs
  • Single FETs
  • Product description: P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
  • 在线订购

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Features and benefits

  • Low threshold voltage
  • Low on-state resistance
  • Trench MOSFET technology
  • Enhanced power dissipation capability of 1096 mW

上一个：CMD299K4 下一个：ISO6721FBDR

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