NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High energy efficiency due to less heat generation
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• AEC-Q101 qualified
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